Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Jiang, Wei; Alan Wang (Ed.)We demonstrated the monolithically integrated biosensor with micro-ring-resonator (MRR) and spatial-heterodyne Fourier-transform-spectrometer (SH-FTS) on Si3N4-on-SiO2, substituting the external optical spectrum analyzer. The spectrum is retrieved from SH-FTS with the bulk sensitivity of 42.9 nm/RIU.more » « less
-
Mid-infrared trace gas sensing is a rapidly developing field with wide range of applications. Although CRDS, TDLAS, FTIR and others, can provide parts per billion and in some cases, parts per trillion sensitivities, these systems require bulky and expensive optical elements and, furthermore, are very sensitive to beam alignment and have significant size and weight that place constrains on their applications in the field, particularly for airborne or handheld platforms. Monolithic integration of light sources and detectors with an optically transparent passive photonics platform is required to enable a compact trace gas sensing system that is robust to vibrations and physical stress. Since the most efficient quantum cascade lasers (QCLs) demonstrated are in the InP platform, the choice of InGaAs-InP for passive photonics eliminates the need for costly wafer bonding versus silicon, germanium of GaAs, that would require optically absorbing bonding interfaces. The InGaAs-InP material platform can potentially cover the entire 位=3-15渭m molecular fingerprint region. In this paper, we experimentally demonstrate monolithic integration of QCL, quantum cascade detector (QCD) and suspended membrane sub-wavelength waveguides in a fully monolithic InGaAs/InP material system. The transverse magnetic polarized QCL emission is efficiently coupled into an underlying InGaAs suspended membrane subwavelength waveguide. In addition to low-loss compact waveguide bends, the suspended membrane architecture offers a high analyte overlap integral with the analyte. The propagating light is absorbed at the peak absorbance wavelength of the selected analyte gas and the transduced signal is detected by the integrated QCD. Gas sensing will be demonstratedmore » « less
-
Chemicals are best recognized by their unique wavelength specific optical absorption signatures in the molecular fingerprint region from 位=3-15渭m. In recent years, photonic devices on chips are increasingly being used for chemical and biological sensing. Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics as well as its optical transparency in the near-infrared telecom wavelengths. Silicon is optically transparent from 1.1 渭m to 8 渭m with research from several groups in the mid-IR. However, intrinsic material losses in silicon exceed 2dB/cm after 位~7渭m (~0.25dB/cm at 位=6渭m). In addition to the waveguiding core, an appropriate transparent cladding is also required. Available core-cladding choices such as Ge-GaAs, GaAs-AlGaAs, InGaAs-InP would need suspended membrane photonic crystal waveguide geometries. However, since the most efficient QCLs demonstrated are in the InP platform, the choice of InGaAs-InP eliminates need for wafer bonding versus other choices. The InGaAs-InP material platform can also potentially cover the entire molecular fingerprint region from 位=3-15渭m. At long wavelengths, in monolithic architectures integrating lasers, detectors and passive sensor photonic components without wafer bonding, compact passive photonic integrated circuit (PIC) components are desirable to reduce expensive epi material loss in passive PIC etched areas. In this paper, we consider miniaturization of waveguide bends and polarization rotators. We experimentally demonstrate suspended membrane subwavelength waveguide bends with compact sub-50渭m bend radius and compact sub-300渭m long polarization rotators in the InGaAs/InP material system. Measurements are centered at 位=6.15渭m for sensing ammoniamore » « less
An official website of the United States government
